Fundamental drift of parameters in chalcogenide phase change memory

Journal of Applied Physics

Volumn 102, Issue 12, 2007, Pages

  Karpov, I V ^a   Mitra, M ^a   Kau, D ^a   Spadini, G ^a   Kryukov, Y A ^b   Karpov, V G ^b  

^a INTEL CORPORATION   (United States)

^b UNIVERSITY OF TOLEDO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GLASS; NUMERICAL ANALYSIS; PARAMETER ESTIMATION; PHASE CHANGE MEMORY; THERMAL EFFECTS; THRESHOLD VOLTAGE;

AMORPHOUS STATE RESISTANCE; DRIFT COEFFICIENT; DRIFT DYNAMICS; FUNDAMENTAL DRIFT;

CHALCOGENIDES;

EID: 37549051695     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2825650     Document Type: Article

References (31)

1. D. Adler, H. Henisch, and N. Mott, Rev. Mod. Phys. 0034-6861 10.1103/RevModPhys.50.209 50, 209 (1978); H. Fritzsche, in Amorphous and Liquid Semiconductors, edited by, J. Tauc, (Plenum, London, 1974), p. 313; D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, J. Appl. Phys. 0021-8979 10.1063/1.328036 51, 3289 (1980).
2. D. Adler, H. Henisch, and N. Mott, Rev. Mod. Phys. 0034-6861 10.1103/RevModPhys.50.209 50, 209 (1978); H. Fritzsche, in Amorphous and Liquid Semiconductors, edited by, J. Tauc, (Plenum, London, 1974), p. 313; D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, J. Appl. Phys. 0021-8979 10.1063/1.328036 51, 3289 (1980).
3. D. Adler, H. Henisch, and N. Mott, Rev. Mod. Phys. 0034-6861 10.1103/RevModPhys.50.209 50, 209 (1978); H. Fritzsche, in Amorphous and Liquid Semiconductors, edited by, J. Tauc, (Plenum, London, 1974), p. 313; D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, J. Appl. Phys. 0021-8979 10.1063/1.328036 51, 3289 (1980).
4. D. A. Baker, M. A. Paesler, G. Lucovsky, S. C. Agarwal, and P. C. Taylor, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.96.255501 96, 255501 (2006); W. Wenic, A. Pamungkas, R. Detemple, C. Steimer, S. Blugel, and M. Wuttig, Nat. Mater. 1476-1122 10.1038/nmat1539 5, 56 (2006).
5. D. A. Baker, M. A. Paesler, G. Lucovsky, S. C. Agarwal, and P. C. Taylor, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.96.255501 96, 255501 (2006); W. Wenic, A. Pamungkas, R. Detemple, C. Steimer, S. Blugel, and M. Wuttig, Nat. Mater. 1476-1122 10.1038/nmat1539 5, 56 (2006).
6. S. Lai, IEDM Tech. Dig., 10.1.1 (2003); G. Atwood and R. Bez, Device Res. Conf. Digest 63, 29 (2005); A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2003.823243 51, 452 (2004); A. L. Lacaita, Solid-State Electron. 0038-1101 10.1016/j.sse.2005.10.046 50, 24 (2006).
7. S. Lai, IEDM Tech. Dig., 10.1.1 (2003); G. Atwood and R. Bez, Device Res. Conf. Digest 63, 29 (2005); A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2003.823243 51, 452 (2004); A. L. Lacaita, Solid-State Electron. 0038-1101 10.1016/j.sse.2005.10.046 50, 24 (2006).
8. S. Lai, IEDM Tech. Dig., 10.1.1 (2003); G. Atwood and R. Bez, Device Res. Conf. Digest 63, 29 (2005); A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2003.823243 51, 452 (2004); A. L. Lacaita, Solid-State Electron. 0038-1101 10.1016/j.sse.2005.10.046 50, 24 (2006).
9. S. Lai, IEDM Tech. Dig., 10.1.1 (2003); G. Atwood and R. Bez, Device Res. Conf. Digest 63, 29 (2005); A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2003.823243 51, 452 (2004); A. L. Lacaita, Solid-State Electron. 0038-1101 10.1016/j.sse.2005.10.046 50, 24 (2006).
10. I. V. Karpov and S. A. Kostylev, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.882527 27, 808 (2006).
11. A. Pirovano, A. L. Lacaita, F. Pellizzer, S. A. Kostylev, A. Benvenuti, and R. Bez, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2004.825805 51, 714 (2004).
12. D. Ielmini, A. L. Lacaita, and D. Mantegazza, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2006.888752 54, 308 (2007).
13. S. R. Ovshinsky, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.21.1450 21, 1450 (1968).
14. V. G. Karpov, Y. A. Kryukov, S. D. Savransky, and I. V. Karpov, Appl. Phys. Lett. 0003-6951 10.1063/1.2715024 90, 123504 (2007).
15. I. V. Karpov, S. D. Savransky, and V. G. Karpov, Proceedings of 22nd IEEE Nonvolatile Semiconductor Memory Workshop, Monterey, CA, August 2007, p. 56.
16. M. V. Sopinskyy, P. E. Shepeliavyi, A. V. Stronski, and E. F. Venger, J. Optoelectron. Adv. Mater. 1454-4164 7, 2255 (2005); P. Boolchand, D. G. Georgiev, and M. Micoulauta, J. Optoelectron. Adv. Mater. 1454-4164 4, 823 (2002); J. M. Saiter, J. Optoelectron. Adv. Mater. 3, 685 (2001).
17. M. V. Sopinskyy, P. E. Shepeliavyi, A. V. Stronski, and E. F. Venger, J. Optoelectron. Adv. Mater. 1454-4164 7, 2255 (2005); P. Boolchand, D. G. Georgiev, and M. Micoulauta, J. Optoelectron. Adv. Mater. 1454-4164 4, 823 (2002); J. M. Saiter, J. Optoelectron. Adv. Mater. 3, 685 (2001).
18. M. V. Sopinskyy, P. E. Shepeliavyi, A. V. Stronski, and E. F. Venger, J. Optoelectron. Adv. Mater. 1454-4164 7, 2255 (2005); P. Boolchand, D. G. Georgiev, and M. Micoulauta, J. Optoelectron. Adv. Mater. 1454-4164 4, 823 (2002); J. M. Saiter, J. Optoelectron. Adv. Mater. 3, 685 (2001).
19. V. G. Karpov and M. Grimsditch, Phys. Rev. B 0163-1829 10.1103/PhysRevB.48.6941 48, 6941 (1993).
20. See the reviews by S. Hunklinger and A. K. Raychaudhuri, in Progress in Low Temparature Physics, edited by, D. F. Brewer, (Elsevier, Amsterdam, 1986), p. 267; Yu. M. Galperin, V. G. Karpov, and V. I. Kozub, Adv. Phys. 0001-8732 10.1080/00018738900101162 38, 669 (1987); W. A. Phillips, Rep. Prog. Phys. 0034-4885 10.1088/0034-4885/50/12/003 50, 1657 (1987).
21. See the reviews by S. Hunklinger and A. K. Raychaudhuri, in Progress in Low Temparature Physics, edited by, D. F. Brewer, (Elsevier, Amsterdam, 1986), p. 267; Yu. M. Galperin, V. G. Karpov, and V. I. Kozub, Adv. Phys. 0001-8732 10.1080/00018738900101162 38, 669 (1987); W. A. Phillips, Rep. Prog. Phys. 0034-4885 10.1088/0034-4885/50/12/003 50, 1657 (1987).
22. See the reviews by S. Hunklinger and A. K. Raychaudhuri, in Progress in Low Temparature Physics, edited by, D. F. Brewer, (Elsevier, Amsterdam, 1986), p. 267; Yu. M. Galperin, V. G. Karpov, and V. I. Kozub, Adv. Phys. 0001-8732 10.1080/00018738900101162 38, 669 (1987); W. A. Phillips, Rep. Prog. Phys. 0034-4885 10.1088/0034-4885/50/12/003 50, 1657 (1987).
23. P. W. Anderson, B. I. Halperin, and C. M. Varma, Philos. Mag. 25, 1 (1972) 0022-2291; W. A. Phillips, J. Low Temp. Phys. 0022-2291 10.1007/BF00660072 7, 351 (1972).
24. P. W. Anderson, B. I. Halperin, and C. M. Varma, Philos. Mag. 25, 1 (1972) 0022-2291; W. A. Phillips, J. Low Temp. Phys. 0022-2291 10.1007/BF00660072 7, 351 (1972).
25. J. R. Jameson, W. Harrison, P. B. Griffin, and J. D. Plummer, Appl. Phys. Lett. 0003-6951 10.1063/1.1738177 84, 3489 (2004).
26. R. T. Johnson, Jr. and R. K. Quinn, J. Non-Cryst. Solids 28, 273 (1978). 0022-3093
27. O. B. Tsiok, V. V. Brazhkin, A. G. Lyapin, and L. G. Khvostantsev, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.80.999 80, 999 (1998).
28. J. Kalb, F. Spaepenb, T. P. Leervad Pedersen, and M. Wuttig, J. Appl. Phys. 0021-8979 10.1063/1.1610775 94, 4908 (2003).
29. M. K. El-Mansy, M. M. El-Zaidia, E. Abo El-Hassan, and A. A. Ammar, Nuovo Cimento D 0392-6737 10.1007/BF02454126 17, 1121 (1995); K. Ramesh, S. Asokan, K. S. Sangunni, and E. S. R. Gopal, J. Phys.: Condens. Matter 11, 3897 (1999).
30. M. K. El-Mansy, M. M. El-Zaidia, E. Abo El-Hassan, and A. A. Ammar, Nuovo Cimento D 0392-6737 10.1007/BF02454126 17, 1121 (1995); K. Ramesh, S. Asokan, K. S. Sangunni, and E. S. R. Gopal, J. Phys.: Condens. Matter 11, 3897 (1999).
31. B. T. Kolomiets and E. M. Raspopova, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 6, 1103 (1972) (in Russian).