Low temperature rectifying junctions for crossbar non-volatile memory devices

2009 IEEE International Memory Workshop, IMW '09

Volumn , Issue , 2009, Pages

  Tallarida, G ^a   Huby, N ^a   Kutrzeba Kotowska, B ^a   Spiga, S ^a   Arcari, M ^b   Csaba, G ^b   Lugli, P ^b   Redaelli, A ^c   Bez, R ^c  

^a LABORATORIO MDM   (Italy)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c Numonyx   (Italy)

Author keywords

Crossbar memory devices; NiO; Resistive switching materials; Schottky junctions; ZnO

Indexed keywords

CROSSBAR MEMORY DEVICES; NIO; RESISTIVE SWITCHING MATERIALS; SCHOTTKY JUNCTIONS; ZNO;

DISTILLATION; SWITCHING SYSTEMS; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 70349993200     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2009.5090598     Document Type: Conference Paper

References (4)

1. M.-J. Lee, S. Seo, D.-C. Kim, S.-E. Ahn, D. H. Seo, et al, Adv. Mater. vol. 19, pp 73-76, January 2007.
2. E. Guziewicz, I.A. Kowalik, M. Godlewski, K. Kopalko, et al., J. Appl. Phys. vol 103, art. num. 033515, February 2008.
3. N. Huby, S. Ferrari, E. Guziewicz, M. Godlewski, and V. Osinniy, Appl. Phys. Lett. 92, art. num. 023502, January 2008.
4. S. Spiga, A. Lamperti, C. Wiemer, M. Perego, E. Cianci, G.Tallarida, H. L. Lu, M. Alia, F. G. Volpe, M. Fanciulli, Microel. Eng 85, pp 2414-2419, December 2008.