Punchthrough-diode-based bipolar RRAM selector by Si epitaxy

IEEE Electron Device Letters

Volumn 33, Issue 10, 2012, Pages 1396-1398

  Srinivasan, V S S ^a   Chopra, S ^a   Karkare, P ^a   Bafna, P ^a   Lashkare, S ^a   Kumbhare, P ^a   Kim, Y ^a   Srinivasan, S ^a   Kuppurao, S ^a   Lodha, S ^a   Ganguly, Udayan ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Bipolar resistance RAM (RRAM); punchthrough; selector

Indexed keywords

BIPOLAR RESISTANCE RAM (RRAM); DESIGNABILITY; EPITAXIAL SI; ON-CURRENTS; ON/OFF CURRENT RATIO; PUNCH-THROUGH; SELECTOR; SI EPITAXY; SWITCHING SPEED;

DIODES; SILICON;

EPITAXIAL GROWTH;

EID: 84866935859     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2209394     Document Type: Article

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