Stackable all-oxide-based nonvolatile memory with Al2 O3 antifuse and p-CuOx/n-InZnOx diode

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 550-552

  Ahn, Seung Eon ^a   Kang, Bo Soo ^a   Kim, Ki Hwan ^a   Lee, Myoung Jae ^a   Lee, Chang Bum ^a   Stefanovich, Genrikh ^a   Kim, Chang Jung ^a   Park, Youngsoo ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Antifuse; One time field programmable (OTP) memory; Oxide diode

Indexed keywords

ANTIFUSE; BEFORE AND AFTER; CURRENT DISTRIBUTION; GLASS SUBSTRATES; HIGH-DENSITY; MEMORY CELL; NON-VOLATILE MEMORIES; ON/OFF RATIO; ONE-TIME FIELD-PROGRAMMABLE (OTP) MEMORY; PROGRAM VOLTAGE; PROGRAMMING SPEED; SI-BASED; STORAGE NODES; SWITCHING ELEMENTS; TIME FIELDS;

COPPER OXIDES; DIODES; SEMICONDUCTOR STORAGE;

ALUMINUM;

EID: 67349130367     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2016582     Document Type: Article

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