Cross-point memory array without cell selectors-device characteristics and data storage pattern dependencies

IEEE Transactions on Electron Devices

Volumn 57, Issue 10, 2010, Pages 2531-2538

  Liang, Jiale ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

Cross point memory; memory cell selection device; nonlinearity; resistance ratio; resistance values; sneak path leakage

Indexed keywords

CROSS-POINT MEMORY; MEMORY CELL SELECTION DEVICE; NON-LINEARITY; RESISTANCE RATIO; RESISTANCE VALUES; SNEAK PATH LEAKAGE;

SEMICONDUCTOR STORAGE;

EID: 77957010403     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2062187     Document Type: Article

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