Self-selective characteristics of nanoscale VO x devices for high-density ReRAM applications

IEEE Electron Device Letters

Volumn 33, Issue 5, 2012, Pages 718-720

  Son, Myungwoo ^a   Liu, Xinjun ^a   Sadaf, Sharif Md ^a   Lee, Daeseok ^a   Park, Sangsu ^a   Lee, Wootae ^a   Kim, Seonghyun ^a   Park, Jubong ^a   Shin, Jungho ^a   Jung, Seungjae ^a   Ham, Moon Ho ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Resistive random access memory (ReRAM); Selection property; Vanadium oxide (VO x) nanoscale device

Indexed keywords

HIGH-DENSITY; MEMORY PERFORMANCE; MEMORY SWITCHING; NANO SCALE; NANOSCALE DEVICE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RETENTION PROPERTIES; SELECTION PROPERTY; THRESHOLD SWITCHING; VANADIUM OXIDES;

ELECTROFORMING; OXIDES; PLATINUM; VANADIUM COMPOUNDS;

NANOTECHNOLOGY;

EID: 84860382445     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2188989     Document Type: Article

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