Voltage polarity effects in Ge2Sb2Te 5-based phase change memory devices

Journal of Applied Physics

Volumn 110, Issue 5, 2011, Pages

  Padilla, Alvaro ^a   Burr, Geoffrey W ^a   Rettner, Charles T ^a   Topuria, Teya ^a   Rice, Philip M ^a   Jackson, Bryan ^a   Virwani, Kumar ^a   Kellock, Andrew J ^a   Dupouy, Diego ^a   Debunne, Anthony ^a   Shelby, Robert M ^a   Gopalakrishnan, Kailash ^a   Shenoy, Rohit S ^a   Kurdi, Blent N ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCESS DEVICES; ACTIVE MATERIAL; BIAS POLARITY; CRYSTALLIZATION PROCESS; DEVICE FAILURES; ELEMENTAL SEGREGATION; MOLTEN REGION; PHASE CHANGES; REVERSE POLARITY; TRANSMISSION ELECTRON; TWO STAGE; VOLTAGE POLARITY;

BIAS VOLTAGE; CELLS; DURABILITY; FAILURE ANALYSIS; GERMANIUM; STOICHIOMETRY; TRACE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

PHASE CHANGE MEMORY;

EID: 80052935794     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3626047     Document Type: Conference Paper

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