A comprehensive model for crossbar memory arrays

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2012, Pages 219-220

  Chen, An ^a   Krivokapic, Zoran ^a   Lin, Ming Ren ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAY DESIGN; COMPLETE SOLUTIONS; COMPREHENSIVE MODEL; CROSS-BAR MEMORIES; CROSSBAR ARRAYS; DEVICE OPTIONS; LINE RESISTANCE; NON-LINEARITY; QUANTITATIVE EVALUATION; SENSING MARGIN; VOLTAGE WINDOW;

EID: 84866933311     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2012.6257033     Document Type: Conference Paper

References (4)

1. Y. Sasago, et al, Symposium on VLSJ Tech., 24-25 (2009);
2. P.J. KlIekes, et al, J. Appl. Phys. 97,034301 (2005);
3. S. Tanachutiwat, et al, IEEE Trans. VLSI Sys. 19, 2023 (2011);
4. K. Likharev, et al, Ann. N.Y. Acad. Sci. 1006, 146 (2003).