Fundamental analysis of resistive nano-crossbars for the use in hybrid nano/CMOS-memory

ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference

Volumn , Issue , 2007, Pages 328-331

  Flocke, Alexander ^a   Noll, Tobias G ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; COMPUTER NETWORKS; DAMPING; HYSTERESIS; PIGMENTS; STIFFNESS; TECHNOLOGY;

ACTIVE DEVICES; CMOS MEMORY; CROSS BAR STRUCTURES; DEVICE DENSITY; EUROPEAN; FUNDAMENTAL ANALYSIS; HYBRID CIRCUITS; HYSTERETIC MATERIALS; NANOMETER DOMAIN; NEW TECHNOLOGIES; PASSIVE BEHAVIOR; ROAD MAPS; SIGNAL LEVELS; SOLID-STATE CIRCUITS CONFERENCE;

HYBRID MATERIALS;

EID: 44849117666     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIRC.2007.4430310     Document Type: Conference Paper

References (12)

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