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Applied Physics Letters

Volumn 103, Issue 20, 2013, Pages

Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications

(6) Woo, Jiyong a Lee, Daeseok a Cha, Euijun a Lee, Sangheon a Park, Sangsu b Hwang, Hyunsang a

a Pohang University of Science and Technology (POSTECH) (South Korea)

b Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-POINT MEMORY; ELECTRICAL CHARACTERISTIC; FIELD SENSITIVES; HIGH CURRENT DENSITIES; HIGH-PERFORMANCE CELL; MULTILAYER STRUCTURES; NON-LINEAR I-V; RESISTIVE MEMORY;

INTERFACES (MATERIALS);

MULTILAYERS;

EID: 84889670872 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4831680 Document Type: Article

Times cited : (14)

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