An 8 mb multi-layered cross-point ReRAM macro with 443 MB/s write throughput

IEEE Journal of Solid-State Circuits

Volumn 48, Issue 1, 2013, Pages 178-185

  Kawahara, Akifumi ^a   Azuma, Ryotaro ^a   Ikeda, Yuuichirou ^a   Kawai, Ken ^a   Katoh, Yoshikazu ^a   Hayakawa, Yukio ^a   Tsuji, Kiyotaka ^a   Yoneda, Shinichi ^a   Himeno, Atsushi ^a   Shimakawa, Kazuhiko ^a   Takagi, Takeshi ^a   Mikawa, Takumi ^a   Aono, Kunitoshi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

bidirectional diode; cross point; error check and correct; multi bit write architecture; multi layer; ReRAM; resistive memory element; short bitline structure; write dummy cell; write throughput

Indexed keywords

BIT LINES; CROSS-POINT; DUMMY CELLS; ERROR CHECKS; MULTI-BITS; RERAM; RESISTIVE MEMORIES;

RANDOM ACCESS STORAGE; TANTALUM COMPOUNDS; THROUGHPUT;

MEMORY ARCHITECTURE;

EID: 84872114992     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2012.2215121     Document Type: Article

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