Selective epitaxial growth of silicon for vertical diode application

Japanese Journal of Applied Physics

Volumn 49, Issue 8 PART 2, 2010, Pages

  Lee, Kong Soo ^a,b   Yoo, Dae Han ^a   Han, Jae Jong ^a   Hyung, Yong Woo ^a   Kim, Seok Sik ^a   Kang, Chang Jin ^a   Jeong, Hong Sik ^a   Moon, Joo Tae ^a   Park, Hyunho ^a,b   Jeong, Hanwook ^b   Kim, Kwang Ryul ^b   Choi, Byoungdeog ^b  

^a SAMSUNG Electronics   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSOLUTE VALUES; CONTACT PATTERN; CONTACT STRUCTURE; CURRENT FLOWS; DICHLOROSILANES; HCL GAS; IDEALITY FACTORS; INSPECTION TOOLS; KEY PROCESS; P-N DIODE; POLYCRYSTALLINE SILICON (POLY-SI); REAL CONTACT; REVERSE LEAKAGE CURRENT; SELECTIVE EPITAXIAL GROWTH; SELECTIVITY CONTROL; SILICON-BASED;

EPITAXIAL GROWTH; POLYSILICON; PROCESS CONTROL; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77958101078     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.08JF03     Document Type: Article

References (11)

1. N. Endo, N. Kasai, A. Ishitani, H. Kitajima, and Y. Kurogi: IEEE Trans. Electron Devices 33 (1986) 1659.
2. M. C. Arst, K. N. Ritz, S. Redkar, J. O. Borland, T. Hann, and J. T. Chen: J. Mater. Res. 6 (1991) 784.
3. T. Nakahata, K. Sugihara, Y. Abe, and T. Ozeki: J. Cryst. Growth 264 (2004) 79.
4. S. G. Reidy, W. J. Varhue, E. Adams, and M. Lavoie: J. Appl. Phys. 91 (2002) 2984.
5. T. Aoyama, S. Saito, and T. Tatsumi: Thin Solid Films 321 (1998) 256.
6. K. E. Violette, P. A. O'Neil, M. C. Öztürk, K. Christensen, and D. M. Maher: J. Electrochem. Soc. 143 (1996) 3290.
7. S. M. Jung, H. Lim, C. D. Yeo, K. H. Kwak, B. K. Son, H. B. Park, J. H. Na, J. J. Shim, C. M. Hong, and K. N. Kim: Symp. VLSI Tech. Dig. 2007 p. 82.
8. K. S. Lee, D. H. Yoo, J. J. Han, G. H. Son, C. H. Lee, J. H. Noh, S. J. Kim, Y. K. Kim, Y. S. You, Y. W. Hyung, and H. D. Lee: Jpn. J. Appl. Phys. 45 (2006) L1193.
9. K. J. Lee, B. H. Cho, W. Y. Cho, S. B. Kang, B. G. Choi, H. R. Oh, C. S. Lee, H. J. Kim, J. M. Park, Q. Wang, M. H. Park, Y. H. Ro, J. Y. Choi, K. S. Kim, Y. R. Kim, I. C. Shin, K. W. Lim, H. K. Cho, C. H. Choi, W. R. Chung, D. E. Kim, Y. J. Yoon, K. S. Yu, G. T. Jeong, H. S. Jeong, C. K. Kwak, C. H. Kim, and K. N. Nam: IEEE J. Solid-State Circuits 43 (2008) 150.
10. W. A. P. Claassen and J. Bloem: J. Electrochem. Soc. 127 (1980) 1836.
11. B. L. Anderson and R. L. Anderson: Fundamentals of Semiconductor Devices (McGraw-Hill, New York, 2005) International edition, p. 271.