Design and fabrication of dual-trench epitaxial diode array for high-density phase-change memory

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1014-1016

  Zhang, Chao ^a,b   Song, Zhi Tang ^a   Wu, Guan Ping ^b   Liu, Bo ^a   Wan, Xu Dong ^b   Wang, Lei ^b   Wang, Lian Hong ^b   Yang, Zuo Ya ^b   Chen, Bomy ^c   Feng, Song Lin ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

^c Microchip   (China)

Author keywords

Dual trench isolated; epitaxial diode; phase change random access memory (PCRAM)

Indexed keywords

ACCESS DEVICES; CELL SIZE; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CURRENT DRIVES; DIODE ARRAYS; DUAL TRENCH ISOLATED; EMBEDDED APPLICATION; EPITAXIAL DIODE; HIGH-DENSITY; JUNCTION DIODE; ORDERS OF MAGNITUDE; PHASE CHANGES; PHASE-CHANGE RANDOM ACCESS MEMORY (PCRAM); PROCESS INTEGRATION;

DIODES; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FABRICATION; SEMICONDUCTOR DIODES;

PHASE CHANGE MEMORY;

EID: 79960896427     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2155028     Document Type: Article

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