Analysis of the effect of cell parameters on the maximum RRAM array size considering both read and write

European Solid-State Device Research Conference

Volumn , Issue , 2012, Pages 282-285

  Zhang, Leqi ^a,b   Cosemans, Stefan ^a   Wouters, Dirk J ^a,b   Groeseneken, Guido ^a,b   Jurczak, Malgorzata ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAY SIZES; BIAS CONDITIONS; CELL PARAMETER; CROSS-POINT ARRAY; CURRENT LEVELS; ON/OFF RATIO; RESISTIVE RAMS; VOLTAGE BIAS;

EID: 84870610864     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2012.6343388     Document Type: Conference Paper

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