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Volumn , Issue , 2011, Pages 1767-1771

Accessibility of nano-crossbar arrays of resistive switching devices

Author keywords

crossbar array; nonlinearity; resistive switching devices; sensing margin

Indexed keywords

ACCESS RESISTANCE; ANALYTICAL APPROACH; BITLINES; CROSSBAR ARRAYS; LINE VOLTAGE; NON-LINEARITY; POWER EFFICIENCY; RESISTIVE SWITCHING; RESISTIVE SWITCHING DEVICES; SENSING MARGIN; STATISTICAL SIMULATION; SWITCHING DEVICES; WORDLINES;

EID: 84858976459     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2011.6144367     Document Type: Conference Paper
Times cited : (30)

References (9)
  • 2
    • 0842266493 scopus 로고    scopus 로고
    • An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying
    • Y.C. Chen, et al, "An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying," IEDM Tech. Dig., 2003, pp. 905-908.
    • (2003) IEDM Tech. Dig. , pp. 905-908
    • Chen, Y.C.1
  • 3
    • 78649597262 scopus 로고    scopus 로고
    • A stackable cross point phase change memory
    • D. Kau, et al, "A stackable cross point phase change memory," IEDM Tech. Dig., 2009, pp. 617-620.
    • (2009) IEDM Tech. Dig. , pp. 617-620
    • Kau, D.1
  • 4
    • 71049151621 scopus 로고    scopus 로고
    • Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-si diode
    • Y. Sasago, et al, "Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode," Symposium on VLSI Technology, 2009, pp. 24-25.
    • (2009) Symposium on VLSI Technology , pp. 24-25
    • Sasago, Y.1
  • 5
    • 44849117666 scopus 로고    scopus 로고
    • Fundamental analysis of resistive nano-crossbars for the use in hybrid nano/CMOS-memory
    • Flocke and T. G. Noll, "Fundamental analysis of resistive nano-crossbars for the use in hybrid nano/CMOS-memory," 33rd European Solid-State Circuits Conference Munich, 2007, pp. 328-331.
    • (2007) 33rd European Solid-state Circuits Conference Munich , pp. 328-331
    • Flocke1    Noll, T.G.2
  • 7
    • 67249088460 scopus 로고    scopus 로고
    • Read-out design rules for molecular crossbar architectures
    • G. Csaba and P. Luigi, "Read-out design rules for molecular crossbar architectures", IEEE Trans. Nanotech. 9, 2009, pp.369-374.
    • (2009) IEEE Trans. Nanotech. , vol.9 , pp. 369-374
    • Csaba, G.1    Luigi, P.2
  • 9
    • 33750926279 scopus 로고    scopus 로고
    • Design approaches for hybrid CMOS/molecular memory based on experimental device data
    • G.S. Rose, et al, "Design approaches for hybrid CMOS/molecular memory based on experimental device data," Proceedings of the 16th ACM Great Lakes symposium on VLSI, 2006, pp.2-7.
    • (2006) Proceedings of the 16th ACM Great Lakes Symposium on VLSI , pp. 2-7
    • Rose, G.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.