Highly scalable novel access device based on Mixed Ionic Electronic Conduction (MIEC) materials for high density phase change memory (PCM) arrays

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 205-206

  Gopalakrishnan, K ^a   Shenoy, R S ^a   Rettner, C T ^a   Virwani, K ^a   Bethune, D S ^a   Shelby, R M ^a   Burr, G W ^a   Kellock, A ^a   King, R S ^a   Nguyen, K ^a   Bowers, A N ^a   Jurich, M ^a   Jackson, B ^a   Friz, A M ^a   Topuria, T ^a   Rice, P M ^a   Kurdi, B N ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

Access device; Diode; MIEC; PCM; PCRAM

Indexed keywords

ACCESS DEVICES; BACK END OF THE LINES; CROSS-POINT ARRAY; DEVICE STRUCTURES; HIGH CURRENT DENSITIES; HIGH DENSITY; HIGH-DENSITY PHASE; MIEC; MIXED IONIC-ELECTRONIC CONDUCTION; NOVEL ACCESS; ON/OFF RATIO; PCM; PCRAM;

PHASE CHANGE MEMORY;

EID: 77957871741     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556229     Document Type: Conference Paper

References (5)

1. I. Yokota, J. Phys. Soc. Japan, 8(5), 595 (1953).
2. I. Riess, Solid State Ionics, 157, 1 (2003).
3. Y. Sasago, VLSI 2009, T2B1 (2009).
4. D. C. Kau, IEDM 2009, 27.1 (2009).
5. Int'l Technology Roadmap for Semiconductors, www.itrs.net (2008).