Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM

IEEE Electron Device Letters

Volumn 25, Issue 5, 2004, Pages 271-272

  Herner, S B ^a   Bandyopadhyay, A ^a   Dunton, S V ^a   Eckert, S V ^a   Gu, J ^a   Hsia, K J ^a   Hu , S ^a   Jahn, C ^a   Kidwell, D ^a   Konevecki, M ^a   Mahajani, M ^a   Park, K ^a   Petti, C ^a   Radigan, S R ^a   Raghuram, U ^a   Vienna, J ^a   Vyvoda, M A ^a  

^a Matrix Semiconductor   (United States)

Author keywords

Antifuse; Breakdown; P i n diode; Polysilicon; Read only memories (ROMs)

Indexed keywords

ADHESION; FIELD PROGRAMMABLE GATE ARRAYS; POLYSILICON; ROM; TITANIUM NITRIDE;

ANTIFUSE FILMS; POLYSILICON DIODE;

SEMICONDUCTOR DIODES;

EID: 2442610851     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.827287     Document Type: Letter

References (5)

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