One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Huang, Jiun Jia ^a   Tseng, Yi Ming ^a   Luo, Wun Cheng ^a   Hsu, Chung Wei ^a   Hou, Tuo Hung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-BAR MEMORIES; CROSSBAR ARRAYS; HIGH CURRENT DENSITIES; HIGH-DENSITY; MEMORY APPLICATIONS; MIM STRUCTURE; NON-VOLATILE MEMORIES; PLASTIC SUBSTRATES; ROOM TEMPERATURE;

PLATINUM;

ELECTRON DEVICES;

EID: 84863052217     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131653     Document Type: Conference Paper

References (14)

1. T. Jackson, "Organic thin film electronics," in IEDM Tech. Dig., 2005,pp. 438-441.
2. C. H. Cheng, K. Y. Chou, A. Chin, and F. S. Yeh, "Very high performance non-volatile memory on flexible plastic substrate," in IEDM Tech. Dig., 2010, pp. 512-515.
3. 2-based device for the flexible stacked RRAM application," Nanotechnology, vol. 21, 115203, 2010.
4. rd ESSCIRC, 2007, pp. 328-331.
5. S. S. Sheu, P. C. Chiang, W. P. Lin, H. Y. Lee, P. S. Chen, Y. S. Chen, F. T. Chen, K. L. Su, M. J. Kao, K. H. Cheng, "A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme," in Symp. on VLSI Circuits, 2009, pp.82-83.
6. H. Wang, Y. H. Tsai, K. C. Lin, M. F. Chang, Y. C. King, C. J. Lin, S. S. Sheu, Y. S. Chen, H. Y. Lee, F. T. Chen, and M. J. Tsai, " Threedimensional4F2 ReRAM cell with CMOS logic compatible process," in IEDM Tech Dig., 2010, pp. 664-667.
7. E. Linn, R. Rosezin, C. Kügeler, and R. Waser, "Complementary resistive switches for passive nanocrossbar memories," Nature Mater., vol. 9, pp. 403-406, 2010.
8. M. J. Lee, Y. Park, B. S. Kang, S. E. Ahn, C. B. Lee, K. Kim, W. Xianyu, G. Stefanovich, J. H. Lee, S. J. Chung, Y. H. Jim, C. S. Lee, J. B. Park, "2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications," in IEDM Tech. Dig., 2007, pp. 771-774.
9. 2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application," J. Appl. Phys., vol.109, 033712, 2011.
10. 2/Pt oxide diode," Appl. Phys. Lett., vol.96, 262901, 2010.
11. N. Raghavan, K. L. Pey, X. Li, W. H. Liu, X. Wu, M. Bosman, and T. Kauerauf, "Very low reset current for an RRAM device achieved in the oxygen-vacancy-controlled regime," IEEE Electron Device Lett., vol. 32, no. 6, pp. 716-718, Jun. 2011.
12. 2 resistive-switching memory," J. Appl. Phys., vol. 109, 084104, 2011.
13. G. Servalli, "A 45nm generation phase change memory technology," in IEDM Tech. Dig., 2009, pp. 113-116.
14. Y. C. Chen, C. F. Chen, C. T. Chen, J. Y. Yu, S. Wu, S. L. Lung, R. Liu, and C. Y. Lu, " An access-transistor-free (0T/lR) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device," in IEDM Tech. Dig., 2003, pp. 905-908.