SCOPUS 정보 검색 플랫폼

Volumn 5, Issue 1, 2013, Pages 422-428

Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer

(9) Tang, Guangsheng a Zeng, Fei a Chen, Chao a Liu, Hongyan a Gao, Shuang a Song, Cheng a Lin, Yisong a Chen, Guang a Pan, Feng a

a TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

COST-EFFICIENT; NANO LAYERS; NANOSCALE CROSSBAR; NON-VOLATILE; OPERATION VOLTAGE; PLASMA OXIDATION; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; RESISTIVE SWITCHING MEMORIES; ROOM TEMPERATURE; SEMICONDUCTOR TECHNOLOGY; TIN THIN FILMS; TIO; TITANIUM OXYNITRIDE;

OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; SWITCHING SYSTEMS; TITANIUM; TITANIUM NITRIDE;

TITANIUM OXIDES;

NANOMATERIAL; TITANIUM; TITANIUM DIOXIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; DATA STORAGE DEVICE; EQUIPMENT DESIGN; EQUIPMENT FAILURE; IMPEDANCE; MATERIALS TESTING; METHODOLOGY; OXIDATION REDUCTION REACTION; PARTICLE SIZE; PLASMA GAS; SEMICONDUCTOR; ULTRASTRUCTURE;

COMPUTER STORAGE DEVICES; CRYSTALLIZATION; ELECTRIC IMPEDANCE; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; NANOSTRUCTURES; OXIDATION-REDUCTION; PARTICLE SIZE; PLASMA GASES; SEMICONDUCTORS; TITANIUM;

EID: 84870940337 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c2nr32743k Document Type: Article

Times cited : (67)

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