High current density and nonlinearity combination of selection device based on TaO x/TiO 2/TaO x structure for one selector-one resistor arrays

ACS Nano

Volumn 6, Issue 9, 2012, Pages 8166-8171

  Lee, Wootae ^a   Park, Jubong ^a   Kim, Seonghyun ^a   Woo, Jiyong ^b   Shin, Jungho ^a   Choi, Godeuni ^b   Park, Sangsu ^a   Lee, Daeseok ^b   Cha, Euijun ^a   Lee, Byoung Hun ^a   Hwang, Hyunsang ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

crested oxide barrier; nonlinearity; one selector one resistor; resistance random access memory; selection device

Indexed keywords

CRESTED OXIDE BARRIER; DEFECT CHEMISTRY; HIGH CURRENT DENSITIES; NON-LINEARITY; NONLINEAR CHARACTERISTICS; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE MEMORIES; RESISTOR ARRAYS; SELECTION DEVICE; SIMS DEPTH PROFILE; TIO;

INTERFACES (MATERIALS); RESISTORS; TANTALUM;

TITANIUM DIOXIDE;

NANOMATERIAL; OXIDE; TANTALUM; TANTALUM OXIDE; TITANIUM; TITANIUM DIOXIDE;

ARTICLE; CHEMISTRY; ELECTROMAGNETIC FIELD; ELECTRONICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; IMPEDANCE; INSTRUMENTATION; MATERIALS TESTING; NANOTECHNOLOGY; NONLINEAR SYSTEM; PARTICLE SIZE; ULTRASTRUCTURE;

ELECTRIC IMPEDANCE; ELECTROMAGNETIC FIELDS; ELECTRONICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; NANOSTRUCTURES; NANOTECHNOLOGY; NONLINEAR DYNAMICS; OXIDES; PARTICLE SIZE; TANTALUM; TITANIUM;

EID: 84866722255     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn3028776     Document Type: Article

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