A stackable cross point phase change memory

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Kau, Derchang ^a   Tang, Stephen ^a,b   Karpov, Ilya V ^a   Dodge, Rick ^a,b   Klehn, Brett ^a   Kalb, Johannes A ^a   Strand, Jonathan ^a,b   Diaz, Aleshandre ^a,b   Leung, Nelson ^a   Wu, Jack ^a,b   Lee, Sean ^a   Langtry, Tim ^a,b   Chang, Kuo Wei ^a   Papagianni, Christina ^a,b   Lee, Jinwook ^a   Hirst, Jeremy ^a,b   Erra, Swetha ^a   Flores, Eddie ^a,b   Righos, Nick ^a   Castro, Hernan ^a,b   Spadini, Gianpaolo ^a   more..

^a INTEL CORPORATION   (United States)

^b R and D Technology Development   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS CIRCUITS; CROSS POINT; CROSS-POINT ARRAY; DYNAMIC RANGE; LOGIC FUNCTIONS; MEMORY CELL; MEMORY DEVICE; NON-VOLATILE MEMORY TECHNOLOGY; STORAGE ELEMENTS;

ELECTRON DEVICES; PULSE CODE MODULATION; SEMICONDUCTOR STORAGE;

PHASE CHANGE MEMORY;

EID: 77952357088     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424263     Document Type: Conference Paper

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