CVD-derived Hf-based high-k gate dielectrics

Critical Reviews in Solid State and Materials Sciences

Volumn 38, Issue 4, 2013, Pages 235-261

  He, Gang ^a   Deng, Bin ^a   Sun, Zhaoqi ^a   Chen, Xiaoshuang ^b   Liu, Yanmei ^a   Zhang, Lide ^c  

^a ANHUI UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

CMOS devices; CVD; Hf based gate dielectrics; high k; thermal stability

Indexed keywords

CMOS DEVICES; FUTURE APPLICATIONS; HIGH DIELECTRIC CONSTANTS; HIGH-K; HIGH-K DIELECTRIC; HIGH-K GATE DIELECTRICS; LATEST DEVELOPMENT; RESEARCH ACTIVITIES;

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DEPOSITION; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; HAFNIUM; THERMODYNAMIC STABILITY; VAPOR DEPOSITION; VAPORS;

GATE DIELECTRICS;

EID: 84882316145     PISSN: 10408436     EISSN: 15476561     Source Type: Journal    
DOI: 10.1080/10408436.2012.729766     Document Type: Article

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