SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 4, 2011, Pages

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

(9) Zhang, Haowei a,c Liu, Lifeng a Gao, Bin a Qiu, Yuanjun a Liu, Xiaoyan a Lu, Jing a Han, Ruqi a Kang, Jinfeng a Yu, Bin b

a PEKING UNIVERSITY (China)

b STATE UNIVERSITY OF NEW YORK (United States)

c Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING EFFECTS; ENHANCED PERFORMANCE; IMPLANTATION DOPING; ION MIGRATION; ON/OFF RATIO; PERFORMANCE IMPROVEMENTS; RANDOMICITY; RELIABILITY DEGRADATION; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING MEMORIES; SWITCHING PARAMETERS; SWITCHING SPEED;

DOPING (ADDITIVES); GADOLINIUM; HAFNIUM COMPOUNDS; NONVOLATILE STORAGE; OXYGEN; OXYGEN VACANCIES;

RANDOM ACCESS STORAGE;

EID: 79551646052 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3543837 Document Type: Article

Times cited : (203)

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