Thermal stability of (HfO2)x(Al2O 3)1-x on Si

Applied Physics Letters

Volumn 81, Issue 19, 2002, Pages 3618-3620

  Yu, H Y ^a   Wu, N ^a   Li, M F ^a   Zhu, Chunxiang ^a   Cho, B J ^a   Kwong, D L ^b   Tung, C H ^c   Pan, J S ^d   Chai, J W ^d   Wang, W D ^d   Chi, D Z ^d   Ang, C H ^e   Zheng, J Z ^e   Ramanathan, S ^f  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b The University of Texas at Austin   (United States)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^e CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^f AIXTRON Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMBINED EFFECT; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; CRYSTALLIZATION TEMPERATURE; HF ALUMINATES; HIGH RESOLUTION; HIGH TEMPERATURE; HIGH VACUUM; INTERFACIAL LAYER; OXYGEN DIFFUSION; OXYGEN DIFFUSION COEFFICIENTS; OXYGEN SPECIES; SI SUBSTRATES;

ALUMINUM; ALUMINUM COMPOUNDS; DIFFUSION IN GASES; GROWTH KINETICS; HAFNIUM; HAFNIUM OXIDES; LANTHANUM COMPOUNDS; OXYGEN; RAPID THERMAL ANNEALING; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 79956027667     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1519733     Document Type: Article

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