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Volumn 12, Issue 2-3, 2006, Pages 187-192

Growth by liquid-injection MOCVD and properties of HfO2 films for microelectronic applications

Author keywords

Hafnium dioxide; High k materials; Liquid injection MOCVD; Thin films

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATTENUATION; CURRENT DENSITY; HAFNIUM COMPOUNDS; INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS DEVICES; PARAFFINS; PERMITTIVITY; SILICA; THICKNESS CONTROL; THIN FILMS;

EID: 33645568375     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200506397     Document Type: Article
Times cited : (28)

References (35)
  • 29
    • 0003998388 scopus 로고
    • (Eds: R. C. Weast. D. R. Lide, M. J. Astle, W. H. Beyer), CRC Press, Boca Raton. FL
    • Handbook of Chemistry and Physics, 70th Edition (Eds: R. C. Weast. D. R. Lide, M. J. Astle, W. H. Beyer), CRC Press, Boca Raton. FL 1989, p. B-93.
    • (1989) Handbook of Chemistry and Physics, 70th Edition
  • 30
    • 33645564399 scopus 로고    scopus 로고
    • JCPDS-ICDD (powder diffraction pattern No. 00-006-0318)
    • JCPDS-ICDD (powder diffraction pattern No. 00-006-0318).
  • 32
    • 33645561922 scopus 로고    scopus 로고
    • E. Rauwel, C. Dubourdieu, B. Holländer, N. Rochat, F. Ducroquet. M. Rossel. G. van Tendeloo, B. Pelissier, unpublished
    • E. Rauwel, C. Dubourdieu, B. Holländer, N. Rochat, F. Ducroquet. M. Rossel. G. van Tendeloo, B. Pelissier, unpublished.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.