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Volumn 22, Issue 15, 2010, Pages 4419-4425

Permittivity enhanced atomic layer deposited HfO2 thin films manipulated by a rutile TiO2 Interlayer

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASIS; APPLIED VOLTAGES; ATOMIC LAYER DEPOSITED; BI-LAYER; CRYSTALLINE STRUCTURE; DIELECTRIC CONSTANTS; EQUIVALENT OXIDE THICKNESS; MONOCLINIC STRUCTURES; RUTILE TIO; STRUCTURAL COMPATIBILITY; TETRAGONAL HFO; TIN ELECTRODES; TIO;

EID: 77955264741     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm1010289     Document Type: Article
Times cited : (31)

References (34)
  • 11
    • 77955232818 scopus 로고    scopus 로고
    • accessed Mar. 2010
    • http://www.intel.com/technology/45nm/index.htm (accessed Mar 2010).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.