Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

IEEE Electron Device Letters

Volumn 24, Issue 7, 2003, Pages 442-444

  Kim, Sun Jung ^a   Cho, Byung Jin ^a   Li, Ming Fu ^a   Zhu, Chunxiang ^a   Chin, Albert ^b   Kwong, Dim Lee ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c The University of Texas at Austin   (United States)

Author keywords

Capacitance density; Co sputtering; HfO2; Lanthanide; Metal insulator metal (MIM) capacitor; Voltage coefficient of capacitor (VCC)

Indexed keywords

CAPACITANCE; CAPACITORS; CURRENT DENSITY; DENSITY (SPECIFIC GRAVITY); DIELECTRIC FILMS; HAFNIUM COMPOUNDS; LANTHANUM COMPOUNDS; MAGNETRON SPUTTERING; PHYSICAL VAPOR DEPOSITION;

HAFNIUM DIOXIDE; METAL-INSULATOR-METAL CAPACITOR; VOLTAGE COEFFICIENT OF CAPACITANCE;

MIM DEVICES;

EID: 0042388021     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.814024     Document Type: Letter

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