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Volumn 520, Issue 14, 2012, Pages 4512-4517

Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition

(13) Devi, Anjana a Cwik, Stefan a Xu, Ke a Milanov, Andrian P a Noei, Heshmat a Wang, Yuemin a Barreca, Davide b Meijer, Jan a Rogalla, Detlef a Kahn, Divine c Cross, Richard c Parala, Harish a Paul, Shashi c

a RUHR UNIVERSITY BOCHUM (Germany)

b UNIVERSITY OF PADOVA (Italy)

c DE MONTFORT UNIVERSITY (United Kingdom)

Author keywords

Composition; Electrical characteristics; MOCVD; Morphology; RE substituted HfO2

Indexed keywords

CAPACITANCE VOLTAGE; ELECTRICAL CHARACTERISTIC; FILM DEPOSITION; GUANIDINATES; METAL INSULATORS; PROTON INDUCED X-RAY EMISSIONS; RE-SUBSTITUTED HFO2; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SI (100) SUBSTRATE; TEMPERATURE RANGE; TEMPERATURE WINDOW;

CHEMICAL ANALYSIS; ELECTRIC PROPERTIES; GADOLINIUM; HAFNIUM; HAFNIUM OXIDES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIM DEVICES; MORPHOLOGY; PHOTOELECTRONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; THIN FILMS; VAPOR DEPOSITION; VAPORS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84860313338 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.10.141 Document Type: Conference Paper

Times cited : (12)

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