Cubic phase stabilization and improved dielectric properties of atomic-layer-deposited EryHf1-yOx thin films

Journal of Materials Research

Volumn 25, Issue 8, 2010, Pages 1629-1635

  Jinesh, K B ^a,b   Lamy, Y ^a,c   Tois, E ^d   Forti, R ^a   Kaiser, M ^e   Bakker, F ^e   Wondergem, H J ^e   Roozeboom, F ^a,f   Besling, W F A ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

^b HOLST CENTRE   (Netherlands)

^c CEA LETI   (France)

^d ASM Microchemistry Oy   (Finland)

^e PHILIPS RESEARCH LABORATORIES   (Netherlands)

^f EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BINARY OXIDES; BREAKDOWN ELECTRIC FIELD; CUBIC PHASE; DIELECTRIC CONSTANTS; ERBIUM OXIDE; INTERFACE STATE; K-VALUE; K-VALUES; LOW LEAKAGE; MIXED OXIDE; OXIDE CHARGE;

ELECTRIC FIELDS; ELECTRIC PROPERTIES; ERBIUM; HAFNIUM; HAFNIUM OXIDES; PERMITTIVITY; THIN FILMS; X RAY DIFFRACTION;

OXIDE FILMS;

EID: 77955974536     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2010.0208     Document Type: Article

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