Highly conformal hafnium silicate film growth by atomic-layer chemical vapor deposition using a new combination of precursors: Hf(OC(CH 3)3)4 and Si(N(CH3)(C 2H5))4

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 6 A, 2006, Pages 5174-5177

  Kim, Jaehyun ^a   Yong, Kijung ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Atomic layer chemical vapor deposition; Dielectric materials; Hafnium silicate; Thin film

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; IMPURITIES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICATES; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC-LAYER CHEMICAL VAPOR DEPOSITION; HAFNIUM SILICATE;

THIN FILMS;

EID: 33745255066     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.5174     Document Type: Article

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