Atomic layer deposition of hafnium silicate gate dielectric films using Hf[N(CH3)(C2H5)]4 and SiH[N(CH 3)2]3 precursors

Electrochemical and Solid-State Letters

Volumn 8, Issue 8, 2005, Pages

  Kamiyama, Satoshi ^a   Miura, Takayoshi ^a   Nara, Yasuo ^a   Arikado, Tsunetoshi ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIELECTRIC FILMS; FILM PREPARATION; GROWTH (MATERIALS); HAFNIUM; VAPOR PRESSURE;

ATOMIC LAYER DEPOSITION (ALD); FILM FORMATION; HAFNIUM SILICATE GATE; PRECURSORS;

SILICON COMPOUNDS;

EID: 24344433107     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1951205     Document Type: Article

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