New single-source precursors for the MOCVD of high-κ dielectric zirconium silicates to replace SiO2 in semiconducting devices

Chemical Vapor Deposition

Volumn 8, Issue 4, 2002, Pages 171-177

  Zürcher, Stefan ^a   Morstein, Marcus ^b   Spencer, Nicholas D ^a   Lemberger, Martin ^c   Bauer, Anton ^c  

^a ETH ZURICH   (Switzerland)

^b Platit AG   (Switzerland)

^c FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

High dielectrics; MOCVD; Single source precursor; Zirconium silicates

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; IONIC CONDUCTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROELECTRONICS; SEMICONDUCTOR DEVICES;

INTERFACE LAYERS; SINGLE-SOURCE PRECURSORS; ULTRATHIN LAYERS;

ZIRCONIUM COMPOUNDS;

EID: 0012634966     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3862(20020704)8:4<171::AID-CVDE171>3.0.CO;2-Z     Document Type: Article

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