Effects of y doping on the structural stability and defect properties of cubic HfO2

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Chen, G H ^a   Hou, Z F ^a   Gong, X G ^a   Li, Quan ^b  

^a FUDAN UNIVERSITY   (China)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRONIC PROPERTIES; GALLIUM ALLOYS; HAFNIUM; HAFNIUM COMPOUNDS; ORGANIC POLYMERS; OXYGEN; OXYGEN VACANCIES; PHASE STABILITY; PHASE TRANSITIONS; STABILITY; VACANCIES;

CHARGED STATES; COMPLEX DEFECTS; CONSISTENT; DEFECT LEVELS; DEFECT PROPERTIES; DOPING; ENERGY DIFFERENCES; EXPERIMENTAL OBSERVATIONS; FIRST-PRINCIPLES CALCULATIONS; FORMATION ENERGIES; GAP STATES; HFO2 FILMS; NEUTRAL STATES; OXYGEN VACANCY DEFECTS; PHASE-TRANSITION; POSITIVELY CHARGED; STRUCTURAL STABILITIES;

YTTRIUM ALLOYS;

EID: 54049141296     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2985908     Document Type: Article

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