Frequency dispersion and dielectric relaxation of La2 Hf2 O7

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 333-337

  Zhao, C Z ^a   Taylor, S ^a   Werner, M ^a   Chalker, P R ^a   Gaskell, J M ^a   Jones, A C ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC LOSSES; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

ATOMIC LAYERS; DIELECTRIC FREQUENCIES; DUAL FREQUENCIES; FREQUENCY DISPERSIONS; INTERFACIAL LAYERS; LIQUID INJECTIONS; POST DEPOSITIONS; POST-DEPOSITION ANNEALING; SILICON SUBSTRATES;

DIELECTRIC RELAXATION;

EID: 59949105100     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3043535     Document Type: Article

References (24)

1. Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi, Appl. Phys. Lett. 89, 032903 (2006).
2. S. V. Ushakov, C. E. Brown, and A. Navrotsky, J. Mater. Res. 19, 693 (2004).
3. B. Mereu, A. Dimoulas, G. Vellianitis, G. Apostolopoulos, R. Scholz, and M. Alexe, Appl. Phys. A: Mater. Sci. Process. A80, 253 (2005).
4. H. Reisinger, G. Steinlesberger, S. Jakschik, M. Gutsche, T. Hecht, M. Leonhard, U. Schroder, H. Seidl, and D. Schumann, Tech. Dig.-Int. Electron Devices Meet. 2001, 267.
5. B. Lee, T. Moon, T. Kim, D. Choi, and B. Park, Appl. Phys. Lett. 87, 012901 (2005).
6. E. H. Nicollian and J. R. Brews, in MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 2003).
7. K. J. Yang and C. Hu, IEEE Trans. Electron Devices 46, 1500 (1999).
8. C.-H. Choi, Y. Wu, J.-S. Goo, Z. Yu, and R. W. Dutton, IEEE Trans. Electron Devices 47, 1843 (2000).
9. K. S. K. Kwa, S. Chattopadhyay, N. D. Jankovic, S. H. Olsen, L. S. Driscoll, and A. G. O'Neill, Semicond. Sci. Technol. 18, 82 (2003).
10. R. Rios, N. D. Arora, and H. Cheng-Liang, IEEE Electron Device Lett. 15, 129 (1994).
11. A. S. Spinelli, A. Pacelli, and A. L. Lacaita, IEEE Electron Device Lett. 22, 281 (2001).
12. J. L. Zhang, J. S. Yuan, Y. Ma, and A. S. Oates, Solid-State Electron. 45, 373 (2001).
13. C. Dubourdieu, E. Rauwel, C. Millon, P. Chaudout, F. Ducroquet, N. Rochat, S. Rushworth, and V. Cosnier, Chem. Vap. Deposition 12, 187 (2006).
14. T.-M. Pan, J.-D. Lee, and W.-W. Yeh, J. Appl. Phys. 101, 024110 (2007).
15. R. J. Potter, P. R. Chalker, T. D. Manning, H. C. Aspinall, Y. F. Loo, A. C. Jones, L. M. Smith, G. W. Critchlow, and M. Schumacher, Chem. Vap. Deposition 11, 159 (2005).
16. H. Watanabe, N. Ikarashi, and F. Ito, Appl. Phys. Lett. 83, 3546 (2003).
17. V. Venkatesan, K. Das, J. A. von Vindheim, and M. W. Geis, Appl. Phys. Lett. 63, 1065 (1993).
18. L. Zhijiong and T. P. Ma, IEEE Electron Device Lett. 25, 655 (2004).
19. T. Schram, L.-A. Ragnarsson, G. Lujan, W. Deweerd, J. Chen, W. Tsai, K. Henson, R. J. P. Lander, J. C. Hooker, J. Vertommen, K. De Meyer, S. De Gendt, and M. Heyns, Microelectron. Reliab. 45, 779 (2005).
20. A. A. Bokov, M. M. Kumar, Z. Xu, and Z.-G. Ye, Phys. Rev. B 64, 224101 (2001).
21. A. K. Jonscher, Universal Relaxation Law (Chelsea Dielectrics, London, 1983).
22. C. Z. Zhao, J. F. Zhang, M. B. Zahid, B. Govoreanu, G. Groeseneken, and S. De Gendt, J. Appl. Phys. 100, 093716 (2006).
23. C. T. Dervos, E. Thirios, J. Novacovich, P. Vassiliou, and P. Skafidas, Mater. Lett. 58, 1502 (2004).
24. H. Choosuwan, R. Guo, A. S. Bhalla, and U. Balachandran, J. Appl. Phys. 93, 2876 (2003).