Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)

Applied Physics Letters

Volumn 91, Issue 20, 2007, Pages

  Yang, Z K ^a,b   Lee, W C ^a   Lee, Y J ^a   Chang, P ^a   Huang, M L ^a,b   Hong, M ^a   Yu, K L ^b   Tang, M T ^b   Lin, B H ^b   Hsu, C H ^b,c   Kwo, J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; EPITAXIAL GROWTH; HAFNIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY SCATTERING; YTTRIUM;

COMPOSITIONAL INVESTIGATION; CRYSTALLINE LATTICE; YTTRIUM CONTENT;

ULTRATHIN FILMS;

EID: 36249001075     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2816121     Document Type: Article

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