Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide

Advanced Functional Materials

Volumn 10, Issue 3-5, 2000, Pages 105-114

  Smith, Ryan C ^a   Ma, Tiezhong ^a   Hoilien, Noel ^a   Tsung, Lancy Y ^b   Bevan, Malcolm J ^b   Colombo, Luigi ^b   Roberts, Jeffrey ^a   Campbell, Stephen A ^a   Gladfelter, Wayne L ^a  

^a University of Minnesota   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

CVD; Hafnium dioxide; Metal nitrates; Precursors; Titanium; Zirconium

Indexed keywords

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD); CARRIER GAS TRANSPORT; DIRECT LIQUID INJECTION (DLI);

HAFNIUM COMPOUNDS; LOW TEMPERATURE EFFECTS; METALLIC FILMS; METALLOGRAPHIC MICROSTRUCTURE; MICROELECTRONICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SYNTHESIS (CHEMICAL); TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

CHEMICAL VAPOR DEPOSITION;

EID: 0034180064     PISSN: 1616301X     EISSN: None     Source Type: Journal    
DOI: 10.1002/1099-0712(200005/10)10:3/5<105::aid-amo402>3.0.co;2-j     Document Type: Article

References (20)

1. Powell CF. In Chemically Deposited Nonmetals, Powell CF, Oxley JH, Blocher JM (eds). John Wiley & Sons, Inc.: New York, NY, 1966; 343-420.
2. Copel M, Gribelyuk M, Gusev E. Appl. Phys. Lett. 2000; 76: 436-438.
3. Yamane H, Mirai T. J. Mat. Sci. Lett. 1987; 6: 1229-1230.
4. Choi J-H, Kim H-G, Yoon S-G. J. Mat. Sci.: Materials in Electronics 1992; 3: 87-92.
5. Tauber RN, Dumbri AC, Caffrey RE. J. Electrochem. Soc. 1971; 118: 747-754.
6. Ghoshtagore RN, Norieka AJ. J. Electrochem. Soc. 1970; 117: 1310-1314.
7. Yeung KS, Lam YW. Thin Solid Films 1983; 109: 169-179.
8. Fictorie CP, Evans JF, Gladfelter WL. J. Vac. Sci. Technol. A 1994; 12: 1108-1113.
9. Kim TW, Jung M, Kim HJ, Park TH, Yoon YS, Kang WN, Yom SS, Na HK. Appl. Phys. Lett. 1994; 64: 1407.
10. Lu J, Wang J, Raj R. Thin Solid Films 1991; 204: L13-L17.
11. Rausch N, Burte EP. Microelec. Eng. 1992; 19: 725-728.
12. Rausch N, Burte EP. J. Electrochem. Soc. 1993; 140: 145-149.
13. Siefering KL, Griffin GL. J. Electrochem. Soc. 1990; 137: 814-818.
14. Yan J, Gilmer DC, Campbell SA, Gladfelter WL, Schmid PG. J. Vac. Sci. Technol. B 1996; 14: 1706-1711.
15. Yoon YS, Kang WN, Yom SS, Kim TW, Jung M, Park TH, Seo KY, Lee JY. Thin Solid Films 1994; 238: 12-14.
16. Bradley DC. Chem. Rev. 1989; 89: 1317-1322.
17. Frenck HJ, Oesterschulze E, Beckmann R, Kulisch W, Kassing R. Mater. Sci. Eng. 1991; A139: 394-400.
18. Gould BJ, Povey IM, Penible ME, Flavell WR. J. Mater. Chem. 1994; 4: 1815-1819.
19. Takahashi Y, Kawae T, Nasu M. J. Cryst. Growth 1986; 74: 409-415.
20. Xue Z, Vaartstra BA, Caulton VG, Chisholm MH, Jones DI. Eur. J. Solid State Inorg. Chem. 1992; 29: 213-225.