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Volumn 12, Issue 2-3, 2006, Pages 130-135

HfO2 and Hf1-xSixO2 thin films grown by metal-organic CVD using tetrakis(diethylamido)hafnium

(8) Ohshita, Yoshio a Ogura, Atsushi b Ishikawa, Masato c Kada, Takeshi c Hoshino, Asako c Suzuki, Toshie c Machida, Hideaki c Soai, Kenso d

a TOYOTA TECHNOLOGICAL INSTITUTE (Japan)

b MEIJI UNIVERSITY (Japan)

c Tri Chemical Laboratories Inc (Japan)

d TOKYO UNIVERSITY OF SCIENCE (Japan)

Author keywords

Hafnium precursors; High k materials; MOSFETs; Silicates

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; HAFNIUM COMPOUNDS; MOSFET DEVICES; NITROGEN; SILICATES; SILICON COMPOUNDS; STOICHIOMETRY; SYNTHESIS (CHEMICAL); VAPOR PRESSURE;

HAFNIUM PRECURSORS; HIGH-K MATERIALS; PRECURSOR;

THIN FILMS;

EID: 33645644068 PISSN: 09481907 EISSN: 15213862 Source Type: Journal
DOI: 10.1002/cvde.200506372 Document Type: Article

Times cited : (15)

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