Enhancement of dielectric constant in Hf O2 thin films by the addition of Al2 O3

Applied Physics Letters

Volumn 89, Issue 19, 2006, Pages

  Park, Pan Kwi ^a   Kang, Sang Won ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; HAFNIUM COMPOUNDS; PERMITTIVITY; PHASE TRANSITIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

HIGH TEMPERATURE PHASES; ORIENTED TETRAGONAL PHASES; PLASMA ENHANCED ATOMIC LAYER DEPOSITION; ROOM TEMPERATURE;

THIN FILMS;

EID: 33750906812     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2387126     Document Type: Article

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