Annealing effect on physical and electrical characteristics of thin HfO2, HfSixOy and HfOyNz films on Si

Microelectronic Engineering

Volumn 86, Issue 3, 2009, Pages 357-360

  Kim, Joo Hyung ^a,c   Ignatova, Velislava A ^a   Weisheit, Martin ^b  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b AMD Fab36 LLC   (Germany)

^c Inha University   (South Korea)

Author keywords

Annealing; Bandgap; Gate oxide; HfO2; High k; Leakage current

Indexed keywords

ANNEALING; ELECTRON TUBE DIODES; ENERGY GAP; GATES (TRANSISTOR); HAND HELD COMPUTERS; OXIDE FILMS; PERSONAL DIGITAL ASSISTANTS; SECONDARY ION MASS SPECTROMETRY; SILICON; SPECTROSCOPIC ELLIPSOMETRY;

BANDGAP; GATE OXIDE; HFO2; HIGH-K; LEAKAGE CURRENT;

HAFNIUM COMPOUNDS;

EID: 59349116742     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.11.012     Document Type: Article

References (18)

1. Zhao X., Ceresoli D., and Vanderbilt D. Phys. Rev. B 71 (2005) 085107
2. Ceresoli D., and Vanderbilt D. Phys. Rev. B 74 (2006) 125108
3. Ono T., Kato K., Toyota H., Fukuda Y., and Jin Y. Jpn. J. Appl. Phys. 45 (2006) 7345
4. Wong H., and Iwai H. Microelectron. Eng. 83 (2006) 1867
5. Puthenkovilankam R., and Chang J.P. J. Appl. Phys. 96 (2004) 2701
6. Rignanese G.-M. J. Phys.: Condens. Matter 17 (2005) R357
7. Park P.K., and Kang S.-W. Appl. Phys. Lett. 89 (2006) 192905
8. H. Wong (Ed.), Proceedings of the 5th IEEE International Caracas Conference on Devices, Circuits and Systems, November 2004, 56.
9. Sayan S., Aravamudhan S., Busch B.W., Schulte W.H., Cosandey F., Wilk G.D., Gustafsson T., and Garfunkel E. J. Vac. Sci. Technol., A 20 (2002) 507
10. Kamiyama S., Miura T., Nara Y., and Arikado T. Appl. Phys. Lett. 86 (2005) 222904
11. Lee P.F., Dai J.Y., Wong K.H., Chan H.L.W., and Choy C.L. J. Appl. Phys. 93 (2003) 3665
12. Robertson J. Rep. Prog. Phys. 69 (2006) 327
13. Specht M., Städele M., Jakschik S., and Schröder U. Appl. Phys. Lett. 84 (2004) 3076
14. Wang S.J., Lim P.C., Huan A.C.H., Liu C.L., Li Q., and Ong C.K. Appl. Phys. Lett. 82 (2003) 2047
15. Queverdo-Lopez M., El-Bouanani M., Addepalli S., Duggan J.L., Gnade B.E., Wallace R.M., Visokay M.R., Douglas M., and Colombo L. Appl. Phys. Lett. 79 (2001) 4192
16. Cho M., Kim J.H., Hwang C.S., Ahn H.-S., Han S., and Won J.Y. Appl. Phys. Lett. 90 (2007) 182907
17. Sasaki T., Akasaka Y., Miyagawa K., Hoshi T., Watanabe Y., Ootsuka F., Yasuhira M., and Arikado T. Jpn. J. Appl. Phys. 44 (2005) 2252
18. Kim J.-H., Ignatova V., Kücher P., Heitmann J., Oberbeck L., and Schröder U. Thin Solid Films 516 (2008) 8333