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Volumn 8, Issue 4, 2002, Pages 163-170

Novel mononuclear alkoxide precursors for the MOCVD of ZrO2 and HfO2 thin films

Author keywords

Alkoxide ligands; Hafnium dioxide; Liquid injection; MOCVD; Zirconium dioxide

Indexed keywords

CMOS INTEGRATED CIRCUITS; HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROELECTRONICS; THERMODYNAMICS; VAPORIZATION;

EID: 0000876411     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3862(20020704)8:4<163::AID-CVDE163>3.0.CO;2-V     Document Type: Article
Times cited : (106)

References (52)
  • 1
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    • R. D. Valtri, F. S. Galasso, German Patent DE 3 427911, 1986.
    • (1986)
    • Valtri, R.D.1    Galasso, F.S.2
  • 8
    • 0002122982 scopus 로고
    • Eds: C. F. Powell, J. H. Oxley, J. M. Blocher, John Wiley & Sons Inc., New York
    • C. F Powell in Chemically Deposited Nonmetals (Eds: C. F. Powell, J. H. Oxley, J. M. Blocher), John Wiley & Sons Inc., New York 1966, p. 343.
    • (1966) Chemically Deposited Nonmetals , pp. 343
    • Powell, C.F.1
  • 15
    • 0009765623 scopus 로고    scopus 로고
    • Recent developments in the MOCVD of electronic materials
    • Recent Developments in the MOCVD of Electronic Materials (Ed: A. C. Jones) Adv. Mater. Opt Electron. 2000, 10 (1-3)
    • (2000) Adv. Mater. Opt Electron. , vol.10 , Issue.1-3
    • Jones, A.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.