Combinatorial CVD of ZrO2 or HfO2 compositional spreads with SiO2 for high κ dielectrics

Journal of Materials Chemistry

Volumn 14, Issue 21, 2004, Pages 3203-3209

  Zhong, Lijuan ^a   Zhang, Zhihong ^b   Campbell, Stephen A ^b   Gladfelter, Wayne L ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

^b University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; FILM GROWTH; PERMITTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA;

ANHYDROUS METAL NITRIDES; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; PRECURSORS;

ZIRCONIUM COMPOUNDS;

HAFNIUM; METAL; SILICON DIOXIDE; ZIRCONIUM OXIDE;

CHEMICAL VAPOR DEPOSITION; COMBINATORIAL CHEMISTRY; CONFERENCE PAPER; DIELECTRIC CONSTANT; ELLIPSOMETRY; REACTOR; SPECTROMETRY; TEMPERATURE DEPENDENCE; VAPOR; VAPORIZATION;

EID: 9144220390     PISSN: 09599428     EISSN: None     Source Type: Journal    
DOI: 10.1039/b406533f     Document Type: Conference Paper

References (28)

1. Q. Wang, J. Perkins, H. M. Branz, J. Alleman, C. Duncan and D. Ginley, Appl. Surf. Sci., 2002, 189, 271-276.
2. X. D. Xiang, X. Sun, G. Briceno, Y. Lou, K.-A. Wang, H. Chang, W. G. Wallace-Freedman, S.-W. Chen and P. G. Schultz, Science, 1995, 268, 1738-1740.
3. R. B. van Dover, L. F. Schneemeyer and R. M. Fleming, Nature, 1998, 392, 162-164.
4. I. Ohkubo, Y. Matsumoto, K. Ueno, T. Chikyow, M. Kawasaki and H. Koinuma, J. Crystal Growth, 2003, 247, 105-109.
5. B. Xia, R. C. Smith, T. L. Moersch and W. L. Gladfelter, Appl. Surf. Sci., 2004, 223, 14-19.
6. R. C. Smith, I. Hoilien. J. Chien, S. A. Campbell, J. T. Roberts and W. L. Gladfelter, Chem. Mater., 2003, 15, 292-298.
7. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett., 1999, 74, 2854-2856.
8. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett., 2000, 76, 112-114.
9. G. D. Wilk, R. M. Wallace and J. M. Anthony, J. Appl. Phys., 2000, 87, 484-492.
10. G. D. Wilk, R. M. Wallace and J. M. Anthony. J. Appl. Phys., 2001, 89, 5243-5275.
11. R. C. Smith, T. Z. Ma, N. Hoilien, L. Y. Tsung, M. J. Bevan, L. Colombo, J. Roberts, S. A. Campbell and W. L. Gladfelter, Adv. Mater. Opt. Electron., 2000, 10, 105-114.
12. R. C. Smith, N. Hoilien, C. J. Taylor, T. Z. Ma, S. A. Campbell, J. T. Roberts, M. Copel, D. A. Buchanan, M. Gribelyuk and W. L. Gladfelter, J. Electrochem. Soc., 2000, 147, 3472-3476.
13. R. G. Gordon, J. Becker, D. Hausmann and S. Suh, Chem. Mater., 2001, 13, 2463-2464.
14. T. Z. Ma, S. A. Campbell, R. Smith, N. Hoilien, B. Y. He, W. L. Gladfelter, C. Hobbs, D. Buchanan, C. Taylor, M. Gribelyuk, M. Tiner, M. Coppel and J. J. Lee, IEEE Trans. Electron Devices, 2001, 48, 2348-2356.
15. J. F. Conley, Y. Ono, D. J. Tweet, W. Zhuang and R. Solanki, J. Appl. Phys., 2003, 93, 712-718.
16. L. J. Zhong, F. Chen, S. A. Campbell and W. L. Gladfelter, Chem. Mater., 2004, 16, 1098-1103.
17. D. Hausmann, J. Becker, S. L. Wang and R. G. Gordon, Science, 2002, 298, 402-406.
18. K. A. Miller, C. John, K. Z. Zhang, K. T. Nicholson, F. R. McFeely and M. M. B. Holl, Thin Solid Films, 2001, 397, 78-82.
19. M. Schmeisser, Angew. Chem., 1955, 67, 493-501.
20. B. O. Field and C. J. Hardy, Proc. Chem. Soc., 1962, 76-77.
21. H. Fukumoto, M. Morita and Y. Osaka, J. Appl. Phys, 1989, 65, 5210-5212.
22. Y. S. Lin, R. Puthenkovilakam and J. P. Chang, Appl. Phys. Lett., 2002, 81, 2041-2043.
23. G. Lucovsky and G. B. Rayner, Appl. Phys. Lett., 2000, 77, 2912-2914.
24. G. M. Rignanese, F. Detraux, X. Gonze, A. Bongiorno and A. Pasquarello, Phys. Rev. Lett., 2002, 89, 117601/1-117601/4.
25. J.W. Kriesel, M.S. Sander and T.D. Tilley, Adv. Mater., 2001, 13, 331-335.
26. K. W. Terry, C. G. Lugmair and T. D. Tilley, J. Am. Chem. Soc., 1997, 119, 9745-9756.
27. C. C. Addison and N. Logan, Adv. Inorg. Chem. Radiochem., 1964, 6, 71-142.
28. R. C. Smith, N. Hoilien, C. Dykstra, S. A. Campbell, J. T. Roberts and W. L. Gladfelter, Chem. Vap. Deposition, 2003, 9, 79-86.