Vapor deposition of metal oxides and silicate: Posible gate insulators for future microelectronics

Chemistry of Materials

Volumn 13, Issue 8, 2001, Pages 2463-2464

  Gordon, R G ^a   Becker, J ^a   Hausmann, D ^a   Suh, S ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METAL OXIDE; SILICATE;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL REACTION; ELECTRONICS; MATERIALS; MATERIALS TESTING; VAPOR;

EID: 0034855299     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm010145k     Document Type: Article

References (20)