Characterization of the annealing impact on La2O3/HfO2 and HfO2/La2O3 stacks for MOS applications

Microelectronic Engineering

Volumn 87, Issue 3, 2010, Pages 278-281

  Rebiscoul D ^a   Favier, S ^b   Barnes, J P ^a   Maes, J W ^c   Martin, F ^a  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

^c ASM BELGIUM   (Belgium)

Author keywords

Dissolution; High K materials; Lanthanum oxide; Thermal annealing

Indexed keywords

CRYSTALLINE STRUCTURE; FILM HOMOGENEITY; HIGH-K MATERIALS; LANTHANUM OXIDE; QUADRATIC PHASE; SILICATE FORMATION; THERMAL-ANNEALING;

DISSOLUTION; HAFNIUM COMPOUNDS; IMPACT RESISTANCE; LANTHANUM ALLOYS; LANTHANUM OXIDES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICATES;

LANTHANUM;

EID: 74449088069     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.06.013     Document Type: Article

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