Failure mechanisms of solder interconnects under current stressing in advanced electronic packages

Progress in Materials Science

Volumn 55, Issue 5, 2010, Pages 428-475

  Chan, Y C ^a   Yang, D ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC TRANSPORT; CURRENT STATUS; CURRENT-STRESSING; DIFFUSION KINETICS; ELECTRICAL CHARACTERISTIC; ELECTRICAL CURRENT; ELECTRONIC PACKAGE; FAILURE MECHANISM; FUTURE DIRECTIONS; HIGH CURRENT DENSITIES; INTERFACIAL REACTIONS; MECHANICAL STRENGTH; MICRO-ELECTRONIC DEVICES; MORPHOLOGICAL EVOLUTION; NUMERICAL SIMULATION; REAL ROOTS; RECENT PROGRESS; SOLDER INTERCONNECTS; THERMAL CHARACTERISTICS; THERMOMIGRATION;

COMPUTER SIMULATION; JOULE HEATING; MICROELECTRONICS;

HEATING;

EID: 77349122538     PISSN: 00796425     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.pmatsci.2010.01.001     Document Type: Review

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