Relationship between edge drift and atomic migration during electromigration of eutectic SnPb lines

Journal of Applied Physics

Volumn 100, Issue 3, 2006, Pages

  Yoon, Min Seung ^a   Lee, Shin Bok ^a   Kim, Oh Han ^b   Park, Young Bae ^b   Joo, Young Chang ^a  

^a Seoul National University   (South Korea)

^b Andong National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTROMIGRATION; EUTECTICS; IN SITU PROCESSING; NUCLEATION; SCANNING ELECTRON MICROSCOPY;

EDGE DRIFT; EUTECTIC SNPB SOLDER; INCUBATION; INTERRUPTIVE TEST METHOD;

SEMICONDUCTING TIN COMPOUNDS;

EID: 33747359377     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2210262     Document Type: Article

References (26)

1. S. Brandenburg and S. Yeh, Proceedings of the Surface Mount International Conference and Exposition 1998, San Jose, CA, 1998, p. 337.
2. E. T. Ogawa, K. D. Li, V. A. Blaschke, and P. S. Ho, IEEE Trans. Reliab. 51, 403 (2002).
3. H. B. Huntington and A. R. Grove, J. Phys. Chem. Solids 20, 76 (1961).
4. I. A. Blech and C. Herring, Appl. Phys. Lett. 29, 131 (1976).
5. J.-Y Choi, S.-S. Lee, and Y.-C. Joo, Jpn. J. Appl. Phys., Part 1 41, 7487 (2002).
6. Q. T. Huynh, C. Y. Liu, C. Chen, and K. N. Tu, J. Appl. Phys. 89, 4332 (2001).
7. C. Y. Liu, C. Chen, C. N. Liao, and K. N. Tu, Appl. Phys. Lett. 75, 58 (1999).
8. Y. T. Yeh, C. K. Chou, Y. C. Hsu, C. Chen, and K. N. Tu. Appl. Phys. Lett. 86, 203504 (2005).
9. T. Y. Lee, K. N. Tu, and D. R. Frear, J. Appl. Phys. 90, 4502 (2001).
10. T. Y. Lee, K. N. Tu, S. M. Kuo, and D. R. Frear, J. Appl. Phys. 89, 3189 (2001).
11. K. N. Tu and K. Zeng, Mater. Sci. Eng., R. 34, l (2001).
12. C. N. Liao and C. T. Wei, J. Electron. Mater. 33, 1137 (2004).
13. M. G. Pecht, R. Agarqal, P. McCluskey, T. Dishongh. S. Javadpour, and R. Mahajan, Electronic Packaging Materials and Their Properties (CRC, Boca Raton, FL, 1998).
14. H. P. R. Frederikse, R. J. Fields, and A. Feldman, J. Appl. Phys. 72, 2879 (1992).
15. M. Y. Yan, J. O. Suh, F. Ren, K. N. Tu, A. V. Vairagar, S. G. Mhaisalker, and A. Krishnamoorthy, Appl. Phys. Lett. 87, 211103 (2005).
16. Y. H. Hsiao, Y. C. Chuang, and C. Y. Liu, Scr. Mater. 54, 661 (2006).
17. R. Spolenak, O. Kraft, and E. Arzt, Microelectron. Reliab. 38, 1015 (1998).
18. J. R. Lloyd and J. J. Clement, Appl. Phys. Lett. 69, 2486 (1996).
19. Y.-J. Park and C. V. Thompson, J. Appl. Phys. 82, 4277 (1997).
20. R. E. Hummel, R. T. Dehoff, and H. J. Geier, J. Phys. Chem. Solids 37, 73 (1976).
21. J. R. Lloyd, J. Phys. D 32, R109 (1999).
22. D. Gupta, K. Viergge, and W. Gust, Acta Mater. 47, 5 (1999).
23. K. Nakagawa et al., Proceedings of the 51st Electronic Components and Technology Conference, 2001 (IEEE, New York, 2001), p. 971.
24. F. H. Huang and H. B. Hungtington, Phys. Rev. B 9, 1479 (1974).
25. P. H. Sun and M. Ohring, J. Appl. Phys. 47, 478 (1976).
26. W. J. Choi, E. C. C. Yeh, and K. N. Tu, J. Appl. Phys. 94, 5665 (2003).