Deformation of solder joint under current stressing and numerical simulation - I

International Journal of Solids and Structures

Volumn 41, Issue 18-19, 2004, Pages 4939-4958

  Ye, Hua ^a   Basaran, Cemal ^a   Hopkins, Douglas C ^a  

^a UNIVERSITY AT BUFFALO   (United States)

Author keywords

Electromigration; Interferometry; Modeling; Moir ; Solder joint

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTROMIGRATION; MATHEMATICAL MODELS; PLASTIC DEFORMATION; STRAIN; STRESS ANALYSIS; THERMOCOUPLES;

CURRENT STRESSING; MOIRE INTERFEROMETRY; POWER PROCESSOR; SPATIAL DISTRIBUTION;

SOLDERED JOINTS;

EID: 10644230108     PISSN: 00207683     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijsolstr.2004.04.002     Document Type: Article

References (29)

1. Balzer, R., Sigvaldason, H., 1979. Equilibrium vacancy concentration measurements on tin single crystals. Physica Status Solidi B: Basic Research 92 (1), 143-147.
2. Clement, J.J., Thompson, C.V., 1995. Modeling electromigration-induced stress evolution in confined metal lines. Journal of Applied Physics 78 (2), 900-904.
3. Jang, J.W., De Silva, A.P., Lee, T.Y., Lin, J.K., Frear, D.R., 2001. Direct correlation between microstructure and mechanical tensile properties in Pb-free solders and eutectic SnPb solder for flip chip technology. Applied Physics Letters 79 (4), 482-484.
4. Khosla, A., Huntington, H.B., 1975. Electromigration in tin single crystals. Journal of Physics and Chemistry of Solids 36 (5), 395-399.
5. Kirchheim, R., 1992. Stress and electromigration in al-lines of integrated-circuits. Acta Metallurgica et Materialia 40 (2), 309-323.
6. Kuz'menko, P.P., 1962. Ukrainskii Fizicheskii Zhurnal (Russ. Ed.) 7, 117.
7. Lange, W., Bergner, D., 1962. Measurement of grain boundary self-diffusion in polycrystalline tin. Physica Status Solidi 2, 1410-1414.
8. Lee, T.Y., Tu, K.N., 2001. Electromigration of eutectic SnPb and SnAg3.8Cu0.7 flip chip solder bumps and under-bump metallization. Journal of Applied Physics 90 (9), 4502-4508.
9. Lee, T.Y., Tu, K.N., Kuo, S.M., Frear, D.R., 2001. Electromigration of eutectic SnPb solder interconnects for flip chip technology. Journal of Applied Physics 89 (6), 3189-3194.
10. 2BGA chip-scale IGBT package. In: Proceedings of 16th Annual IEEE Applied Power Electronics Conference and Exposition, Anaheim, California.
11. Liu, X., Calata, J.N., Wang, J., Lu, G.-Q., 1999. The Packaging of Integrated Power Electronics Modules Using Flip-Chip Technology. CPES Seminar.
12. Liu, X., Jing, X., Lu, G.-Q.A., 2000. Comparative Study of Wire Bonding versus Solder Bumping of Power Semiconductor Devices. 2000 IEEE (IWIPP), Boston, MA.
13. Lodding, A., 1962. Current induced motion of lattice defects in indium metal. Journal of Physics and Chemistry of Solids 26 (1), 143-151.
14. Paulasto-Krockel, M., Hauck, T., 2001. Flip chip die attach development for multichip Mechatronics power packages. IEEE Transactions on Electronics Packaging Manufacturing 24 (4), 300-306.
15. Post, D., Han, B., Ifju, P., 1994. High Sensitivity Moire. Springer, New York.
16. Sarychev, M.E., Zhinikov, Y.V., 1999. General model for mechanical stress evolution during electromigration. Journal of Applied Physics 86 (6), 3068-3075.
17. Seelig, K., Suraski, D., 2001. Advanced materials considerations for lead-free electronics assembly. International Journal of Microcircuits and Electronic Packaging 24 (4), 366-378.
18. Singh, P., Ohring, M., 1984. Tracer study of diffusion and electromigration in thin tin films. Journal of Applied Physics 56 (4), 899-907.
19. Sorbello, R.S., 1973. Pseudopotential based theory of the driving forces for electromigration in metals. Journal of Physics and Chemistry of Solids 34 (6), 937-950.
20. Sun, P.H., Ohring, M., 1976. Tracer self-diffusion and electromigration in thin tin films. Journal of Applied Physics 47 (2), 478-485.
21. User Manual: FlexPDE. [3], 2002. P.O. Box 4217, Antioch, CA 94531-4217, PDE Solutions Inc. http://www.PDESolutions.com.
22. Ye, H., Basaran, C., Hopkins, D., 2002a. Experiment study on reliability of solder joints under electrical stressing-nano-indentation, atomic flux measurement. In: Proceedings of 2002 International Conference on Advanced Packaging and Systems, Reno, Nevada.
23. Ye, H., Hopkins, D., Basaran, C., 2002b. Measurement and effects of high electrical current stress in solder joints. In: Proceedings of the 35th International Symposium on Microelectronics, Denver, Colorado, pp. 427-432.
24. Ye, H., Lin, M., Basaran, C., 2002c. Failure modes and FEM analysis of power electronic packaging. Finite Element in Analysis and Design 38 (7), 601-612.
25. Ye, H., Basaran, C., Hopkins, D., 2003a. Thermomigration in Pb-Sn solder joints under Joule heating during electric current stressing. Applied Physics Letters 82 (8), 1045-1047.
26. Ye, H., Basaran, C., Hopkins, D., 2003b. Numerical simulation of stress evolution during electromigration in IC interconnet lines. IEEE Transactions on Components and Packaging Technologies 26 (3), 673-681.
27. Ye, H., Basaran, C., Hopkins, D.C., 2003c. Damage mechanics of microelectronics solder joints under high current densities. International Journal of Solids and Structures 40 (15), 4021-4032.
28. Ye, H., Hopkins, D.C., Basaran, C., 2003. Measurement of high electrical current density effects in solder joints. Microelectronics Reliability 43 (12), 2021-2029.
29. Zhao, Y., Basaran, C., Cartwright, A., Dishongh, T., 2000. Thermomechanical behavior of micron scale solder joints under dynamic loads. Mechanics of Materials 32 (3), 161-173.