Effect of barrier layer on the electrical and reliability characteristics of high-k gate dielectric films

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 797-800

  Jeon, Yongjoo ^a   Lee, Byoung Hun ^a   Zawadzki, Keith ^a   Qi, Wen Jie ^a   Lucas, Aaron ^a   Nieh, Renee ^a   Lee, Jack C ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; TITANIUM DIOXIDE; VAPOR DEPOSITION;

EQUIVALENT OXIDE THICKNESS (EOT); JET-VAPOR DEPOSITION (JVD);

DIELECTRIC FILMS;

EID: 0032255101     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)