Single-layer thin HfO2 gate dielectric with n+-polysilicon gate

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 44-45

  Kang, Laegu ^a   Jeon, Yongjoo ^a   Onishi, Katsunori ^a   Lee, Byoung Hun ^a   Qi, Wen Jie ^a   Nieh, Renee ^a   Gopalan, Sundar ^a   Lee, Jack C ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES;

CAPACITANCE-VOLTAGE CHARACTERISTICS; GATE DIELECTRICS; POLYSILICON GATES;

VLSI CIRCUITS;

EID: 0033683689     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)