High performance dual metal gate CMOS with high mobility and low threshold voltage applicable to bulk CMOS technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 152-153

  Yamaguchi, S ^a   Tai, K ^a   Hirano, T ^a   Ando, T ^a   Hiyama, S ^a   Wang, J ^a   Hagimoto, Y ^a   Nagahama, Y ^a   Kato, T ^a   Nagano, K ^a   Yamanaka, M ^a   Terauchi, S ^a   Kanda, S ^a   Yamamoto, R ^a   Tateshita, Y ^a   Tagawa, Y ^a   Iwamoto, H ^a   Saito, M ^a   Nagashima, N ^a   Kadomura, S ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; GATE DIELECTRICS; HAFNIUM COMPOUNDS; POLYSILICON; SILICA; VOLTAGE MEASUREMENT;

HIGH PERFORMANCE DUAL METAL GATES; MOBILITY ENHANCEMENT;

CMOS INTEGRATED CIRCUITS;

EID: 41149120661     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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