Role of nitrogen atoms in reduction of electron charge traps in Hf-based high-κ dielectrics

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 363-365

  Umezawa, Naoto ^a   Shiraishi, K ^a,b   Torii, K ^c,d   Boero, M ^b   Chikyow, T ^a   Watanabe, H ^a,e   Yamabe, K ^a,b   Ohno, T ^a   Yamada, K ^a,f   Nara, Y ^c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^d HITACHI LTD   (Japan)

^e OSAKA UNIVERSITY   (Japan)

^f WASEDA UNIVERSITY   (Japan)

Author keywords

Dielectric materials; Doping; Hafnium compounds; MOSFETs; Trapping+

Indexed keywords

CHARGE TRAPPING; ELECTRON TRAPS; MOSFET DEVICES; NITROGEN; SEMICONDUCTOR DOPING;

FIRST-PRINCIPLES CALCULATIONS; NITROGEN INCORPORATION;

DIELECTRIC MATERIALS;

EID: 34247574773     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.894655     Document Type: Article

References (22)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-κ, gate dielectrics: Current status and materials properties considerations," J. Appl. Phys., vol. 89, no. 10, p. 5243, May 2001.
2. M. Koyama, A. Kaneko, T. Ino, M. Koike, Y. Kamata, R. Iijima, Y. Kamimuta, A. Takashima, M. Suzuki, C. Hongo, S. Inumiya, M. Takayanagi, and A. Nishiyama, "Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics," in IEDM Tech. Dig., 2002, pp. 849-852.
3. y advanced gate dielectrics with poly-Si gate electrode," in IEDM Tech. Dig., 2002, pp. 857-860.
4. C. Choi, C. S. Kang, C. Y. Kang, S. J. Rhee, M. S. Akbar, S. A. Krishnan, M. Zhang, and J. C. Lee, "Positive bias temperature instability effects of Hf-based nMOSFETs with various nitrogen and silicon profiles," IEEE Electron Device Lett., vol. 26, no. 1, pp. 32-34, Jan. 2005.
5. 3 annealing process for high-quality HfSiON gate oxide," IEEE Electron Device Lett., vol. 25, no. 7, pp. 465-467, Jul. 2004.
6. G. Shang, P. W. Peacock, and J. Robertson, "Stability and band offsets of nitrogenated high-dielectric-constant gate oxides," Appl. Phys. Lett., vol. 84, no. 1, pp. 106-108, Jan. 2004.
7. J. L. Gavartin, A. L. Shluger, A. S. Foster, and G. I. Bersuker, "The role of nitrogen-related defects in high-κ, dielectric oxides: Density-functional studies," J. Appl. Phys., vol. 97, no. 5, p. 053-704, Mar. 2005.
8. N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, and T. Arikado, "First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-κ, dielectrics," Appl. Phys. Lett., vol. 86, no. 14, p. 143-507, Apr. 2005.
9. 2 defects by spectroscopic ellipsometry," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 22, no. 4, pp. 1337-1341, Jul. 2004.
10. 2-based high-κ gate dielectrics," in IEDM Tech. Dig. 2004, pp. 129-132.
11. H. Watanabe, S. Kamiyama, N. Umezawa, K. Shiraishi, S. Yoshida, Y. Watanabe, T. Arikado, T. Chikyow, K. Yamada, and K. Yasutake, "Role of nitrogen incorporation into Hf-based high-κ gate dielectrics for termination of local current leakage paths," Jpn. J. Appl. Phys., vol. 44, no. 43, p. L1333, 2005.
12. 2," Appl. Phys. Lett., vol. 87, no. 6, p. 062-105, Aug. 2005.
13. 2 high-dielectric-constant gate oxide," Appl. Phys. Lett., vol. 87, no. 18, p. 183-505, Oct. 2005.
14. 2 by nitrogen," J. Appl. Phys., vol. 99, no. 4, p. 044-105, Feb. 2006.
15. J. P. Perdew, K. Burke, and M. Ernzerhof, "Generalized gradient approximation made simple," Phys. Rev. Lett., vol. 77, no. 18, pp. 3865-3868, Oct. 1996.
16. J. Yamauchi, M. Tsukada, S. Watanabe, and O. Sugino, "First-principles study on energetics of c-BN(001) reconstructed surfaces," Phys. Rev. B, Condens. Matter, vol. 54, no. 8, pp. 5586-5603, Aug. 1996.
17. D. Vandebilt, "Soft self-consistent pseudopotentials in a generalized eigenvalue formalism," Phys. Rev. B, Condens. Matter, vol. 41, no. 11, pp. 7892-7895, Apr. 1990.
18. 2 film with high temperature annealing," in Proc. Extend Abstracts Int. Conf. Solid State Devices and Mater., Kobe, Japan, Sep. 12-15, 2005, p. 232.
19. 2 through structural phase transformation," Appl. Phys. Lett., vol. 86, no. 10, p. 102-906, Mar. 2005.
20. P. E. Blöchl, "First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen," Phys. Rev. B, Condens. Matter, vol. 62, no. 10, pp. 6158-6179, Sep. 2000.
21. A. S. Foster, F. L. Gejo, A. Shluger, and R. M. Nieminen, "Vacancy and interstitial defects in hafnia," Phys. Rev. B, Condens. Matter, vol. 65, no. 17, p. 174-117, May 2002.
22. M. Koyama, Y. Kamimuta, M. Koike, T. Ino, and A. Nishiyama, "Cubic-HfN formation in Hf-based high-κ, gate dielectrics with N incorporation and its impact on electrical properties of films," Jpn. J. Appl. Phys. vol. 44, no. 4B, p. 2311, 2005.